Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are good candidates to replace the traditional silicon-based transistors. Although these devices show superior performances compared to Si and SiC-based devices, they suffer from some reliability issues. The aim of this research project is to improve the performance of the GaN HEMTs and enhance their reliability by performing a data analysis technique. This analysis would result in better understanding of GaN HEMTs’ characteristics.
The ever-growing market of portable electronic devices (e.g., laptop computers, tablets, smartphones) has resulted in the penetration of AC adapters in households greater than ever. Accordingly, the portability of such devices entails substantial demands for light-weighted and compact devices. This necessitates the critical need for high power density and highly efficient adapters. In particular, consumers continuously expect to have a more compact adapter with higher efficiency. Besides, the current technology has reached mature stages.
Gallium Nitride (GaN) semiconductors are more and more being used in switching power devices and the GaN transistors are the promising candidate of next-generation power devices that can substitute Silicon (Si) devices.
However, this young technology suffers from reliability difficulties. The aim of this research work is to contribute to the understanding of the properties of GaN devices. These studies give an understanding of the more complex dynamic instability and static reliability issues of GaN devices which helps manufactures to improve the reliability of GaN transistors.
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