Gallium nitride processes for efficient low loss power transistors

The project’s aim is to develop a comprehensive technological platform for the fabrication of GaN-based electronics devices for applications in telecommunications and power generating and management systems. As of this date, the progress relative to this technology has been excellent and sustained. Our team has now established the most advanced fabrication expertise for GaN-based devices among Canadian universities, and state-of-the-art high electron mobility transistors are now routinely fabricated. Technologies around the epitaxial growth of GaN-based materials are also to be developed. Our previous work yielded promising results with significantly improved gas injector designs for highly efficient gas usage in an epitaxial tool. Other designs also include a new concept for the gas management system with a diffusely heated evacuated cabinet that allows for easy maintenance and cheaper operation. Materials grown within the frame of this project will be valuated in terms performance with regards to HEMT microfabrication standards.

Intern: 
Elias Al Alam & Abderaouf Boucherif
Faculty Supervisor: 
Drs. Vincent Aimez & Richard Arès
Province: 
Quebec
Partner: 
Program: