Stochastic Modelling of One Time Programmable Memory Bit Cell

Programming of long-term digital memory storage devices is currently not an optimised process. This is due to the fact that the exact physical mechanisms that allow for a data bit to be reliably stored and read are not well understood. As a result, in order to produce high quality, long-lasting, reliable memory cells, the manufacturer must perform extensive testing and
iterative modifications on each generation of products. Our project aims to develop a software model that simulates the physics and chemistry of memory device structures on an atomic level. This tool will allow for product optimisation in early stages of the design process, and for circuit and system design to be performed with an understanding of the memory devices in mind. Product engineers and manufacturers will save time and money while improving the reliability and performance of both the memory devices and system being delivered to the customer.

Intern: 
Mengqi Wang
Faculty Supervisor: 
Wai Tung Ng
Province: 
Ontario
Partner: 
Partner University: 
Program: