In this collaborative project between L. Goncharova’s group (Western) and Sciencetech (London, ON), silicon, germanium, and tin heterostructure will be grown by thin-film deposition techniques. By precisely controlling the amount of each element in the films, these heterostructures can overcome the poor light adsorption and emission properties of silicon, and will be explored for light detection in short wave infra-red spectral range. Precise control of these parameters can be achieved via ion implantation or during a growth process called molecular beam epitaxy, followed by ion implantation.