Computational study of the effect of electron-ion coupling on diffusion of defects in silicon

Silicon is the most widely used material in electronics and is now becoming important for emerging quantum technologies. Many of the quantum–relevant “color centers” in silicon form and evolve through the movement of tiny defects inside the crystal. These defects play a major role in how silicon devices behave, but their motion is still not fully understood under the conditions in which real devices are manufactured. During processes such as ion implantation, laser processing, or high–field operation, the electrons in silicon can become much hotter than the atoms. This creates non–equilibrium conditions where electrons transfer energy to the lattice, potentially changing how defects move.

This project will use computer simulations to study how these non–equilibrium effects influence the motion of defects in silicon. By comparing traditional simulations with simulations that include electron–phonon energy exchange, the research will determine whether these effects speed up, slow down, or redirect defect motion. The results will help improve our understanding of how defects behave during device fabrication and may support the development of silicon–based quantum photonic technologies.

Faculty Supervisor:

Laurent Karim Béland

Student:

Partner:

University of Tartu

Discipline:

Physics

Sector:

Technology; Quantum Science

University:

Queen's University

Program: