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Micron scale ultra-low-cost light emitting diodes made using silicon carbide semiconductor material
A next generation of silicon-carbide (SiC) -based high performance microLEDs has the potential to replace existing gallium-indium nitride-based LED used in LED illuminated displays. The development of these SiC microLEDs is the goal of this research in collaboration with display company AVT Solutions Ltd. Silicon and carbide are low-cost earth-abundant minerals with ?1% of the cost of gallium nitride. This has the potential to dramatically increase market penetration of microLED-illuminated displays compared to current LED displays using gallium-indium nitride materials due to the dramatic cost improvement. The longer term goal is to demonstrate a high performance but very cost effective microLED displays of interest to AVT Solutions made of silicon carbide and to demonstrate that these microLEDs possess the optoelectronic characteristics suitable for display application including brightness, uniformity, and stability.
Faculty Supervisor:
Adrian Kitai
Student:
Partner:
AVT Solutions Ltd
Discipline:
Engineering
Sector:
Manufacturing; Professional, scientific and technical services
University:
McMaster University
Program:
Accelerate
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Mitacs is funded by the Government of Canada, the Government of Alberta, the Government of British Columbia, Research Manitoba, the Government of New Brunswick, the Government of Newfoundland and Labrador, the Government of Nova Scotia, the Government of Ontario, Innovation PEI, the Government of Quebec, the Government of Saskatchewan, and the Government of Yukon.