Development of Copper Precursors for Atomic Layer Deposition

Microelectronic fabrication needs a method to deposit very thin films of copper in very accurate patterns to interconnect the microelectronic devices on a chip. Atomic layer deposition (ALD) is a method used in microelectronic manufacturing that could do this, but a suitable copper process has yet to be identified.

This internship is to help continue to develop a promising copper deposition process for ALD. Using a volatile compound containing copper, it has been shown that copper metal can be deposited at reasonably low temperature using a plasma of hydrogen gas. The intern on this project will continue to develop the copper chemistry and the deposition process, as well as help the partner organisation (GreenCentre Canada) to construct and file a patent application for this intellectual property.

Faculty Supervisor:

Sean Barry

Student:

Partner:

GreenCentre Canada;Foward Water Technologies

Discipline:

Physics

Sector:

Manufacturing

University:

Carleton University

Program: