Fabrication and Characterization of Ion-Beam Synthesized SiGe

The student will use ion beam synthesis to fabricate germanium thin films integrated with silicon substrates. The fabrication will use a method pioneered within our group, known as implantation-condensation. Silicon is bombarded with germanium atoms and subsequently heated to a temperature of 1000C in an oxygen atmosphere. The silicon is removed leaving a high quality germanium layer. This is a cost-effective way in which germanium can be incorporated into silicon (orders of magnitude cheaper than current standard practice). Due to the importance of germanium in silicon processing (in both electronics and optics), this technique may radically change industrial methodology. Benefit to Canada will reside in the economic exploitation of this technique under license.

Faculty Supervisor:

Andrew Knights

Student:

Partner:

The University of Manchester - dup

Discipline:

Engineering

Sector:

Information and Communications Technology; Nanotechnology; Advanced Manufacturing

University:

McMaster University

Program: