Characterization of Parasitic Lead Inductances of E-mode pGaN HEMTs to Debug the Early Drain Breakdown Problem

In the field of power electronics, it is vitally important to fabricate transistors that can work under high-voltage regimes, that are more energy-efficient. Our sponsor Crosslight has a customer, GaNPower, which is a Canadian company that designs and makes GaN transistors for this purpose. However, the transistors break down more easily when used on circuit boards after packaging. Crosslight is responsible to debug this problem. In this project, we will work with Crosslight build a test board and its circuit model to test its first hypothesis of the problem.

Faculty Supervisor:

Guangrui Xia

Student:

Zeyu Wan

Partner:

Crosslight Software

Discipline:

Engineering

Sector:

University:

University of British Columbia

Program:

Accelerate

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