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Thin film transistors (TFT) are widely used in many devices such as displays. There is also a need for TFTs that can be integrated into the back end of the line for CMOS devices, logic, memory, and imagers. In order for TFTs to achieve this integration, a detailed understanding of defects in their metal oxide (MO) semiconductor and dielectric films is required. In this project, modeling will be used to obtain a quantitatively accurate description of the defect chemistry.
Ken Cadien
Synthergy Inc
Engineering
Information and cultural industries; Manufacturing
University of Alberta
Elevate
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