Dopant-Defect Coupling and Recombination Efficiency in Mg- and Si-Doped GaN Nanowires

Semiconductor materials are central to modern technology, from clean energy generation and quantum computing to high-speed communication. Among them, gallium nitride (GaN) nanowires have attracted strong interest for their excellent electrical conductivity, optical performance, and thermal stability. These qualities make them ideal for energy-efficient devices such as solar cells, LEDs, and photoelectrochemical systems. However, their full potential is still limited by the complex behaviour of dopants—impurities added to control conductivity—and the structural defects that often follow.

Faculty Supervisor:

Songrui Zhao

Student:

Partner:

University of Adelaide

Discipline:

Engineering

Sector:

Education

University:

McGill University

Program:

Globalink Research Award

Current openings

Find the perfect opportunity to put your academic skills and knowledge into practice!

Government

International

Load More

International

Load More