High temperature characterization and modeling of GaN transistors

This research project makes use of computer-based models in order to investigate the high temperature behavior of Gallium Nitride (GaN) power transistors. The GaN technology is finding more and more applications in different sectors like energy, transportation, and industrial systems due to the possibility of making power converters smaller and more efficient. The understanding gained from the project’s temperature effect study will be applicable to design and reliability of future power electronics, thus facilitating the development of new technologies. The partnership between the home and host institutions not only enhances the skill set in device physics, simulation, and modeling but also paves the way for more extensive joint research on advanced semiconductor materials in the long run.

Faculty Supervisor:

Ahmad Hassan

Student:

Partner:

Zewail City of Science, Technology and Innovation

Discipline:

Engineering

Sector:

Information and Communications Technology

University:

Polytechnique Montréal

Program: