NEGF based Cryogenic MOSFET simulation including inelastic scattering

The project aims to develop a state-of-the-art numerical simulator to compute transistor’s physical behaviors at deep cryogenic temperatures. First of its kind, the simulator will incorporate physical effects critical for transistor’s operations at cryogenic temperature such as inelastic scattering, while maintaining computational efficiency and robustness. The successful outcome will provide the research community a widely desired tool for understanding and predicting how realistic MOSFETs behave under deep cryogenic temperatures. It is expected that the simulator will provide critical enhancement to the current product line of the partner organization, Nanoacademic Technologies, a leading company in cryogenic temperature numerical simulation for semiconductor devices.

Faculty Supervisor:

Lan Wei

Student:

Partner:

Nanoacademic Technologies Inc.

Discipline:

Engineering

Sector:

Professional, scientific and technical services

University:

University of Waterloo

Program: