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Development of packaging technologies for high-voltage p-GaN HEMT-on-Si
This research is to develop a gallium nitride-based transistor used in high-power applications such as in electric vehicles and in solar power grids. Current gallium nitride transistors break down around 600-800 V. We propose to develop a technology that enable them to have more than 1200 V breakdown voltages. We also keep the balance between the high breakdown requirement and high current requirement.
Faculty Supervisor:
Guangrui (Maggie) Xia
Student:
Partner:
GaNPower International Inc.
Discipline:
Engineering
Sector:
Manufacturing
University:
The University of British Columbia
Program:
Accelerate
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