Gate Driver Development for E-mode GaN Power HEMT

Crosslight Inc. is a leading provider of technology CAD tools for the design and simulation of semiconductor devices. They are also developing innovative gallium nitride (GaN) HEMT which is considered as one of the next generation materials for power electronics. Because of the material properties of GaN are different from the traditional silicon semiconductor devices, GaN offers superior advantages as power transistors, including low conduction loss, low switching loss, and high switching frequency. These benefits can both increase the system efficiency of power converters and decrease the passive component cost and the PCB size. However, there are some challenges existing in GaN power HEMTs as their gate structures are more prone to breakdown when compared to silicon transistors. Therefore, it is necessary to design a gate driver for GaN HEMT with the appropriate output voltage. This work could assist the market expansion of GaN power HEMTs by offering simple gate driving solutions.

Faculty Supervisor:

Wai Tung Ng

Student:

Partner:

Crosslight Software Inc

Discipline:

Engineering

Sector:

Information and cultural industries; Manufacturing; Professional, scientific and technical services

University:

University of Toronto

Program: