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AlGaN/GaN high electron mobility transistors (HEMTs) have emerged as promising candidates for high breakdown, high power output, and high operating temperature applications. However, there are several problems that hinder its practical use such as current collapse and high gate leakage current. Most of available studies use analytical formulas and only analyze a certain aspect. Physical models that can predict both phenomena consistently and describe a larger picture of device behavior are still lacking, which will be addressed in this work. This capability is important in the HEMT structure design, and will make APSYSTM a more competitive tool in the market.
Information and communications technologies
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