Characterization of Parasitic Lead Inductances of E-mode pGaN HEMTs to Debug the Early Drain Breakdown Problem
In the field of power electronics, it is vitally important to fabricate transistors that can work under high-voltage regimes, that are more energy-efficient. Our sponsor Crosslight has a customer, GaNPower, which is a Canadian company that designs and makes GaN transistors for this purpose. However, the transistors break down more easily when used on circuit boards after packaging. Crosslight is responsible to debug this problem. In this project, we will work with Crosslight build a test board and its circuit model to test its first hypothesis of the problem.
View Full Project DescriptionGuangrui Xia
Crosslight Software Inc
Engineering
Information and cultural industries; Manufacturing; Professional, scientific and technical services
The University of British Columbia
Accelerate
