Designing and Prototyping an Isolated Three-Stage GaN-Based Bidirectional 6.6 kW On-Board Charger (OBC)

Galium Nitride (GaN) technology compared to the conventional silicon and silicon carbide technologies gives better switching performance in terms of switching losses and switching speed. Also, since GaN Fets do not have intrinsic body diode as in Si and SiC based switching MOSFETS, they can work at much higher frequencies in room temperature, leading to using more compact passive components for power electronics devices. Production of bidirectional onboard chargers (OBC) are boosted due to the increasing demand for electric vehicles. GaN Systems Inc. provides high-efficient GaN Fets which can facilitate reaching more efficient and compact OBCs. The production of a 6.6 kW bidirectional OBC with above 96% peak efficiency is projected using GaN products of GaN systems Inc. The final design will facilitate the usage of GaN technologies in automotive industry, increase the system efficiency, and encourage the more exploitations of GaN Systems products.

Faculty Supervisor:

Xiaoyu Wang

Student:

Partner:

Infineon Technologies Canada Inc.

Discipline:

Engineering

Sector:

Automotive; Technology; Energy and Utilities

University:

Carleton University

Program: