Development of Floating-gate based Stable Organic N-type Optical Memory Transistor

Optical memory, one of the foundations of an image sensor, is a device that integrates the functions of a photodetector that detects light and a flash memory that stores information. When the device is exposed to light, the number of optical carriers generated in the floating gate increases. The memory status is determined accordingly. In the case of existing diode-type photodetectors, there is a signal delay in transmitting the detected signal to the flash memory along the metal line, and if the dark current of the diode is not clearly lowered, there are problems with low detection signal levels. In addition, although many reliable organic P-type materials have been reported, research and development are still needed for organic N-type semiconductors to maintain stable operation. When the above-mentioned optical memory is operated as a transistor type, the threshold voltage is adjusted according to the memory state. This makes it easy to distinguish multiple memory states using the on-current and off-current ratio of the transistor. Accordingly, this research team seeks to implement floating-gate-based stable organic N-type transistor-type optical memory by introducing each technology through collaborative research between Korea and Canada.

Faculty Supervisor:

Benoit Lessard

Student:

Partner:

Gachon University

Discipline:

Engineering

Sector:

Nanotechnology; Energy and Utilities; Other

University:

University of Ottawa

Program: