Factors influencing cubic phase purity in nonpolar GaN LED structures

This proposal aims to develop materials which have the potential to drastically reduce the energy consumption in large data centers by replacing existing copper interconnects with much more efficient optical interconnects. Gallium nitride (GaN) is a material that is responsible for the current revolution in lighting technology allowing full spectrum light emission over all visible colors with very high efficiency. The currently used form of GaN is based on a hexagonal crystal structure which limits its ability to switch data quickly. Another form of GaN with a cubic crystal structure is inherently superior in principle, but poses challenges due to the fact that it is not the most stable crystal structure. In this proposal we aim to solve these problems by careful application of crystal growth models combined with advanced fabrication techniques and material characterization tools. The proposed funding should enable the demonstration of the first high efficiency devices based on this novel for of GaN.

Faculty Supervisor:

Simon Watkins

Student:

Partner:

Hyperlume

Discipline:

Physics

Sector:

Information and cultural industries; Manufacturing

University:

Simon Fraser University

Program: