Hole spin in direct bandgap group IV quantum dots

This internship is to investigate the properties of charge carriers confined into nano-scale structures commonly known as quantum dots. The internship will focus on exploring a novel family of group IV semiconductors exhibiting a direct bandgap. The core paradigm here is to harness the favorable properties of hole spin in group IV quantum dots along with the efficient interaction with photons resulting from the bandgap directness to engineer new device architectures for quantum computing and quantum communication. The spin of a charge carrier is central in these technologies as it provides the mean to encode information. Thus, this research aims at modeling the properties of spins in group IV quantum dots and how resilient the spins are to electrical noise and coupling with the environment. This research will address a significant gap in the current knowledge pertaining to spin dynamics in emerging silicon-compatible materials with numerous attractive properties regrading performance and information transfer efficiency. This collaboration will thus extend the knowledge in the field of quantum technologies towards a new family of devices with properties leading to high quality spin systems and their effective interface with photons.

Faculty Supervisor:

Oussama Moutanabbir

Student:

Partner:

University of Basel

Discipline:

Physics

Sector:

Quantum Science; Nanotechnology

University:

Polytechnique Montréal

Program: