Improved Radiative Recombination in Silicon Carbide Through Neutron Irradiation

White light emission from blue-emitting Light Emitting Diodes (LEDs) is now replacing virtually all other types of lighting and display lighting in commercial and residential sectors.
Currently, such LEDs are made using gallium indium nitride, gallium indium aluminum phosphide and gallium arsenide compounds that are expensive to produce. Instead we are seeking to use very low cost silicon carbide by introducing damage into the crystalline structure of this material. This damage is known to enable improved radiative efficiency. Without modification, silicon carbide provides virtually no light emission.
Damage as a result of neutron bombardment will be studied. High energy neutrons are available from the nuclear reactor at McMaster University. This gives us a unique opportunity to study neutron damage in silicon carbide and its effect on the radiative efficiency of silicon carbide LEDs.

Faculty Supervisor:

Ray LaPierre

Student:

Liam Dow

Partner:

AVT Solutions Ltd

Discipline:

Engineering

Sector:

Manufacturing

University:

McMaster University