In-situ Investigation of MoS2 QDs Defects using Variable Temperature Raman Microscopy

Molybdenum disulfide (MoS2) Quantum Dots (QDs) are being developed for use in areas from optoelectronics to energy storage and conversion, but synthetic protocols have yet to be developed to prepare high quality 0-dimensional (0D) material. A key challenge in efforts to develop synthetic protocols is a lack of rapid characterization technique that can unambiguously identify and quantify structural defects. Raman microscopy is a primary technique used to characterize MoS2. In this study, variable temperature Raman microscopy is employed to analyze the structure and reactivity of MoS2 QDs under varied gaseous environments. Defects in the MoS2 lattice are expected to destabilize the lattice while simultaneously introducing chemical reactivity. Performing in-situ temperature-dependent Raman microscopy under varied environments provides the ability to prove the thermal stability and surface chemistry of MoS2 QDs. Optimization of this characterization approach will enable identification and quantification of defects, which will in turn help refine synthetic protocols to make high quality MoS2 QDs for varied device.

Faculty Supervisor:

Rodney Smith

Student:

Partner:

Universität Duisburg-Essen

Discipline:

Physics

Sector:

Quantum Science; Nanotechnology

University:

University of Waterloo

Program: