Process Development of Atomic Layer Deposition Cobalt and Ruthenium Metal Films – Year two

Next-generation integrated circuits require the innovation of new interconnect materials in order to maintain the performance improvements of Moore’s Law scaling. Cobalt (Co) and ruthenium (Ru) are two specific metals that are garnering strong interest for use in the filling of interconnects because of their better electrical performance and reliability at the extremely scaled dimensions […]

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Process Development of Atomic Layer Deposition Cobalt and Ruthenium Metal Films

Next-generation integrated circuits require the innovation of new interconnect materials in order to maintain the performance improvements of Moore’s Law scaling. Cobalt (Co) and ruthenium (Ru) are two specific metals that are garnering strong interest for use in the filling of interconnects because of their better electrical performance and reliability at the extremely scaled dimensions […]

Read More