Gallium nitride processes for efficient low loss power transistors

The project’s aim is to develop a comprehensive technological platform for the fabrication of
GaN-based electronics devices for applications in telecommunications and power generating
and management systems. As of this date, the progress relative to this technology has been
excellent and sustained. Our team has now established the most advanced fabrication
expertise for GaN-based devices among Canadian universities, and state-of-the-art high
electron mobility transistors are now routinely fabricated. Technologies around the epitaxial
growth of GaN-based materials are also to be developed. Our previous work yielded
promising results with significantly improved gas injector designs for highly efficient gas
usage in an epitaxial tool. Other designs also include a new concept for the gas management
system with a diffusely heated evacuated cabinet that allows for easy maintenance and
cheaper operation. Materials grown within the frame of this project will be evaluated in terms
performance with regards to HEMT microfabrication standards

Faculty Supervisor:

Vincent Aimez;Richard Arès

Student:

Partner:

Prompt;OSEMI Canada;Université de Sherbrooke

Discipline:

Engineering

Sector:

Information and cultural industries; Manufacturing; Professional, scientific and technical services

University:

Université de Sherbrooke

Program: